Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTY64N055T

IXTY64N055T

For Reference Only

Part Number IXTY64N055T
PNEDA Part # IXTY64N055T
Description MOSFET N-CH 55V 64A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,732
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY64N055T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY64N055T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY64N055T, IXTY64N055T Datasheet (Total Pages: 5, Size: 170.78 KB)
PDFIXTY64N055T Datasheet Cover
IXTY64N055T Datasheet Page 2 IXTY64N055T Datasheet Page 3 IXTY64N055T Datasheet Page 4 IXTY64N055T Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTY64N055T Datasheet
  • where to find IXTY64N055T
  • IXYS

  • IXYS IXTY64N055T
  • IXTY64N055T PDF Datasheet
  • IXTY64N055T Stock

  • IXTY64N055T Pinout
  • Datasheet IXTY64N055T
  • IXTY64N055T Supplier

  • IXYS Distributor
  • IXTY64N055T Price
  • IXTY64N055T Distributor

IXTY64N055T Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1420pF @ 25V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IRFR9N20DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 25V

FET Feature

-

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7469

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

NTD85N02RG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 78.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTHS2101PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

25mOhm @ 5.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 6.4V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

ChipFET™

Package / Case

8-SMD, Flat Lead

BSL372SNH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

220mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

1.8V @ 218µA

Gate Charge (Qg) (Max) @ Vgs

14.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

329pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSOP-6-6

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

20CTQ045

20CTQ045

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO220AB

NCP1055ST100T3G

NCP1055ST100T3G

ON Semiconductor

IC CONV PWM UVLO HV SOT223-4

LTC3854EMSE#PBF

LTC3854EMSE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 12MSOP

ADP2107ACPZ-1.2-R7

ADP2107ACPZ-1.2-R7

Analog Devices

IC REG BUCK 1.2V 2A 16LFCSP

LBM2016T330J

LBM2016T330J

Taiyo Yuden

FIXED IND 33UH 125MA 3.6 OHM SMD

LT3010EMS8E#TRPBF

LT3010EMS8E#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 50MA 8MSOP

M29W160ET70N6E

M29W160ET70N6E

Micron Technology Inc.

IC FLASH 16M PARALLEL 48TSOP

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

NCP81071BDR2G

NCP81071BDR2G

ON Semiconductor

IC MOSFET DVR HS 5A DUAL 8SOIC

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

SI8233BB-D-IS

SI8233BB-D-IS

Silicon Labs

DGTL ISO 2.5KV GATE DRVR 16SOIC

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC