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IXXX160N65B4

IXXX160N65B4

For Reference Only

Part Number IXXX160N65B4
PNEDA Part # IXXX160N65B4
Description IGBT 650V 310A 940W PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,440
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXX160N65B4 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXX160N65B4
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXXX160N65B4, IXXX160N65B4 Datasheet (Total Pages: 6, Size: 210.4 KB)
PDFIXXK160N65B4 Datasheet Cover
IXXK160N65B4 Datasheet Page 2 IXXK160N65B4 Datasheet Page 3 IXXK160N65B4 Datasheet Page 4 IXXK160N65B4 Datasheet Page 5 IXXK160N65B4 Datasheet Page 6

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IXXX160N65B4 Specifications

ManufacturerIXYS
SeriesGenX4™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)310A
Current - Collector Pulsed (Icm)860A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 160A
Power - Max940W
Switching Energy3.3mJ (on), 1.88mJ (off)
Input TypeStandard
Gate Charge425nC
Td (on/off) @ 25°C52ns/220ns
Test Condition400V, 80A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

64A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 32A

Power - Max

300W

Switching Energy

2.2mJ (off)

Input Type

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Gate Charge

89nC

Td (on/off) @ 25°C

20ns/260ns

Test Condition

720V, 32A, 5Ohm, 15V

Reverse Recovery Time (trr)

190ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 7A

Power - Max

54W

Switching Energy

70µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

9ns/65ns

Test Condition

480V, 7A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Power - Max

395W

Switching Energy

2.3mJ (on), 900µJ (off)

Input Type

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Gate Charge

160nC

Td (on/off) @ 25°C

28ns/174ns

Test Condition

400V, 75A, 8Ohm, 15V

Reverse Recovery Time (trr)

92ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

Power - Max

310W

Switching Energy

330µJ (off)

Input Type

Standard

Gate Charge

160nC

Td (on/off) @ 25°C

-/145ns

Test Condition

400V, 30A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IXGR50N60B

IXYS

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 50A

Power - Max

250W

Switching Energy

3mJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

50ns/110ns

Test Condition

480V, 50A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™

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