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IXYH50N65C3D1

IXYH50N65C3D1

For Reference Only

Part Number IXYH50N65C3D1
PNEDA Part # IXYH50N65C3D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH50N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH50N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYH50N65C3D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)132A
Current - Collector Pulsed (Icm)250A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 36A
Power - Max600W
Switching Energy800µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge86nC
Td (on/off) @ 25°C20ns/90ns
Test Condition400V, 36A, 5Ohm, 15V
Reverse Recovery Time (trr)36ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Manufacturer

IXYS

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

76A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 30A

Power - Max

300W

Switching Energy

4.6mJ (on), 3.4mJ (off)

Input Type

Standard

Gate Charge

120nC

Td (on/off) @ 25°C

-

Test Condition

600V, 30A, 47Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Supplier Device Package

TO-247AD (IXDH)

IRG4BH20K-LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

22A

Vce(on) (Max) @ Vge, Ic

4.3V @ 15V, 5A

Power - Max

60W

Switching Energy

450µJ (on), 440µJ (off)

Input Type

Standard

Gate Charge

28nC

Td (on/off) @ 25°C

23ns/93ns

Test Condition

960V, 5A, 50Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262

STGD14NC60KT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

80W

Switching Energy

82µJ (on), 155µJ (off)

Input Type

Standard

Gate Charge

34.4nC

Td (on/off) @ 25°C

22.5ns/116ns

Test Condition

390V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

RJP60F5DPK-01#T0

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Power - Max

260.4W

Switching Energy

-

Input Type

Standard

Gate Charge

74nC

Td (on/off) @ 25°C

53ns/90ns

Test Condition

400V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

FGD3325G2-F085V

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, EcoSPARK®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

250V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.25V @ 4V, 6A

Power - Max

150W

Switching Energy

-

Input Type

Logic

Gate Charge

21nC

Td (on/off) @ 25°C

800ns/5.1µs

Test Condition

5V, 1kOhm

Reverse Recovery Time (trr)

1.2µs

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252, (D-Pak)

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