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STGB20V60F

STGB20V60F

For Reference Only

Part Number STGB20V60F
PNEDA Part # STGB20V60F
Description IGBT 600V 40A 167W D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGB20V60F Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGB20V60F
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGB20V60F, STGB20V60F Datasheet (Total Pages: 18, Size: 1,553.37 KB)
PDFSTGP20V60F Datasheet Cover
STGP20V60F Datasheet Page 2 STGP20V60F Datasheet Page 3 STGP20V60F Datasheet Page 4 STGP20V60F Datasheet Page 5 STGP20V60F Datasheet Page 6 STGP20V60F Datasheet Page 7 STGP20V60F Datasheet Page 8 STGP20V60F Datasheet Page 9 STGP20V60F Datasheet Page 10 STGP20V60F Datasheet Page 11

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STGB20V60F Specifications

ManufacturerSTMicroelectronics
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Power - Max167W
Switching Energy200µJ (on), 130µJ (off)
Input TypeStandard
Gate Charge116nC
Td (on/off) @ 25°C38ns/149ns
Test Condition400V, 20A, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Infineon Technologies

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 18.8A, 15Ohm, 15V

Reverse Recovery Time (trr)

76ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

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IXYS

Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 32A

Power - Max

200W

Switching Energy

320µJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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