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IXYP20N65C3D1M

IXYP20N65C3D1M

For Reference Only

Part Number IXYP20N65C3D1M
PNEDA Part # IXYP20N65C3D1M
Description IGBT 650V 18A 50W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP20N65C3D1M Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP20N65C3D1M
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYP20N65C3D1M Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)18A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max50W
Switching Energy430µJ (on), 350µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C19ns/80ns
Test Condition400V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

190W

Switching Energy

2.1mJ (off)

Input Type

Standard

Gate Charge

62nC

Td (on/off) @ 25°C

20ns/270ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

-

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IRG4PC60FPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 60A

Power - Max

520W

Switching Energy

300µJ (on), 4.6mJ (off)

Input Type

Standard

Gate Charge

290nC

Td (on/off) @ 25°C

42ns/310ns

Test Condition

480V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

175A

Current - Collector Pulsed (Icm)

1000A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

520W

Switching Energy

2.85mJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

315nC

Td (on/off) @ 25°C

48ns/160ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

24-PowerSMD, 21 Leads

Supplier Device Package

24-SMPD

RGS00TS65HRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

88A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Power - Max

326W

Switching Energy

1.46mJ (on), 1.29mJ (off)

Input Type

Standard

Gate Charge

58nC

Td (on/off) @ 25°C

36ns/115ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247N

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