J112G
For Reference Only
| Part Number | J112G |
| PNEDA Part # | J112G |
| Description | JFET N-CH 35V 0.35W TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,056 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 27 - Jul 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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J112G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | J112G |
| Category | Semiconductors › Transistors › Transistors - JFETs |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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J112G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1µA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Resistance - RDS(On) | 50 Ohms |
| Power - Max | 350mW |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Input Capacitance (Ciss) (Max) @ Vds 10pF @ 12V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 310mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) - Power - Max 225mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 900µA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) - Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 100mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 8 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
