JAN2N3767
For Reference Only
| Part Number | JAN2N3767 |
| PNEDA Part # | JAN2N3767 |
| Description | TRANS NPN 80V 4A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,104 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JAN2N3767 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JAN2N3767 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JAN2N3767 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/518 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Power - Max | 25W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) |
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 200mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V Power - Max 625mW Frequency - Transition 50MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 2.5V @ 6mA, 3A Current - Collector Cutoff (Max) 500µA DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V Power - Max 70W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Rohm Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA, 2V Power - Max 500mW Frequency - Transition 320MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-96 Supplier Device Package TSMT3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |
