JANSR2N5153U3
For Reference Only
| Part Number | JANSR2N5153U3 |
| PNEDA Part # | JANSR2N5153U3 |
| Description | RH POWER BJT |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,490 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
JANSR2N5153U3 Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | JANSR2N5153U3 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- JANSR2N5153U3 Datasheet
- where to find JANSR2N5153U3
- Microsemi
- Microsemi JANSR2N5153U3
- JANSR2N5153U3 PDF Datasheet
- JANSR2N5153U3 Stock
- JANSR2N5153U3 Pinout
- Datasheet JANSR2N5153U3
- JANSR2N5153U3 Supplier
- Microsemi Distributor
- JANSR2N5153U3 Price
- JANSR2N5153U3 Distributor
JANSR2N5153U3 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/545 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2.5A, 5V |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | U3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 1A, 1V Power - Max 2W Frequency - Transition 160MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-261-4, TO-261AA Supplier Device Package SOT-223 (TO-261) |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 270mV @ 300mA, 3A Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V Power - Max 5W Frequency - Transition 140MHz Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package PowerDI5060-8 |
Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 2A, 4V Power - Max 15W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case 3-SIP Supplier Device Package MT-4-A1 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V Power - Max 1W Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 400mV @ 70mA, 700mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V Power - Max 350mW Frequency - Transition 170MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
