JANTX2N5666
For Reference Only
| Part Number | JANTX2N5666 |
| PNEDA Part # | JANTX2N5666 |
| Description | PNP TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,424 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 29 - May 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTX2N5666 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANTX2N5666 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
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JANTX2N5666 Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 30mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 20V Power - Max 830mW Frequency - Transition 60MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 300mA, 3A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V Power - Max 36W Frequency - Transition 3MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V Power - Max 625mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
