Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

JANTX2N6798

JANTX2N6798

For Reference Only

Part Number JANTX2N6798
PNEDA Part # JANTX2N6798
Description MOSFET N-CH
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JANTX2N6798 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJANTX2N6798
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • JANTX2N6798 Datasheet
  • where to find JANTX2N6798
  • Microsemi

  • Microsemi JANTX2N6798
  • JANTX2N6798 PDF Datasheet
  • JANTX2N6798 Stock

  • JANTX2N6798 Pinout
  • Datasheet JANTX2N6798
  • JANTX2N6798 Supplier

  • Microsemi Distributor
  • JANTX2N6798 Price
  • JANTX2N6798 Distributor

JANTX2N6798 Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/557
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42.07nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can

The Products You May Be Interested In

IRFH8318TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3180pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 59W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

DMN3007LSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

64.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2714pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

PHK31NQ03LT,518

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4235pF @ 12V

FET Feature

-

Power Dissipation (Max)

6.9W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

FDMS86252L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

4.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

56mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1335pF @ 75V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

FDMS86500L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

25A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12530pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

EVN-D8AA03B54

EVN-D8AA03B54

Panasonic Electronic Components

TRIMMER 50K OHM 0.1W PC PIN TOP

ADG3304BRUZ

ADG3304BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 14TSSOP

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

TEMT1020

TEMT1020

Vishay Semiconductor Opto Division

SENSOR PHOTO 880NM TOP VIEW 2SMD

IRLML2402TRPBF

IRLML2402TRPBF

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

SP3232EEN-L/TR

SP3232EEN-L/TR

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

BCV62C,215

BCV62C,215

Nexperia

TRANS PNP 30V 100MA DUAL SOT143B

MAX1953EUB+

MAX1953EUB+

Maxim Integrated

IC REG CTRLR BUCK 10UMAX

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

LTC4365ITS8#TRMPBF

LTC4365ITS8#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROT TSOT23-8

2EDN7424FXTMA1

2EDN7424FXTMA1

Infineon Technologies

IC GATE DRIVER DSO8