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JANTXV2N3811

JANTXV2N3811

For Reference Only

Part Number JANTXV2N3811
PNEDA Part # JANTXV2N3811
Description TRANS 2PNP 60V 0.05A TO78
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JANTXV2N3811 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJANTXV2N3811
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays

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JANTXV2N3811 Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/336
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Power - Max350mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78-6

The Products You May Be Interested In

JAN2N3811

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/336

Transistor Type

2 PNP (Dual)

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

250mV @ 100µA, 1mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 1mA, 5V

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-78-6 Metal Can

Supplier Device Package

TO-78-6

BC858CDXV6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Power - Max

500mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

UMB4NFHATN

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

Transistor Type

2 PNP Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Power - Max

150mW

Frequency - Transition

250MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

UMT6

ULN2003D1013TR

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

Transistor Type

7 NPN Darlington

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

1.6V @ 500µA, 350mA

Current - Collector Cutoff (Max)

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 350mA, 2V

Power - Max

-

Frequency - Transition

-

Operating Temperature

-40°C ~ 85°C (TA)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SO

HN1C01FE-GR,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

2 NPN (Dual)

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Power - Max

100mW

Frequency - Transition

80MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

ES6

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