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MJE800G

MJE800G

For Reference Only

Part Number MJE800G
PNEDA Part # MJE800G
Description TRANS NPN DARL 60V 4A TO225AA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,360
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MJE800G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMJE800G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
MJE800G, MJE800G Datasheet (Total Pages: 6, Size: 134.41 KB)
PDFMJE703 Datasheet Cover
MJE703 Datasheet Page 2 MJE703 Datasheet Page 3 MJE703 Datasheet Page 4 MJE703 Datasheet Page 5 MJE703 Datasheet Page 6

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MJE800G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 1.5A, 3V
Power - Max40W
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-225AA

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