MMBTH10-4LT1
For Reference Only
| Part Number | MMBTH10-4LT1 |
| PNEDA Part # | MMBTH10-4LT1 |
| Description | RF TRANS NPN 25V 800MHZ SOT23-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,082 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MMBTH10-4LT1 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MMBTH10-4LT1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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MMBTH10-4LT1 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 800MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 4mA, 10V |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 25V Frequency - Transition 470MHz ~ 860MHz Noise Figure (dB Typ @ f) - Gain 12dB Power - Max 17W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 250mA, 5V Current - Collector (Ic) (Max) 1.2A Operating Temperature 200°C (TJ) Mounting Type Chassis, Stud Mount Package / Case 55FT Supplier Device Package 55FT |
