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MMIX1F160N30T

MMIX1F160N30T

For Reference Only

Part Number MMIX1F160N30T
PNEDA Part # MMIX1F160N30T
Description MOSFET N-CH 300V 102A SMPD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,012
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MMIX1F160N30T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberMMIX1F160N30T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MMIX1F160N30T, MMIX1F160N30T Datasheet (Total Pages: 7, Size: 224.87 KB)
PDFMMIX1F160N30T Datasheet Cover
MMIX1F160N30T Datasheet Page 2 MMIX1F160N30T Datasheet Page 3 MMIX1F160N30T Datasheet Page 4 MMIX1F160N30T Datasheet Page 5 MMIX1F160N30T Datasheet Page 6 MMIX1F160N30T Datasheet Page 7

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MMIX1F160N30T Specifications

ManufacturerIXYS
SeriesGigaMOS™, HiPerFET™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs335nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET Feature-
Power Dissipation (Max)570W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package24-SMPD
Package / Case24-PowerSMD, 21 Leads

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