MS1512
For Reference Only
| Part Number | MS1512 |
| PNEDA Part # | MS1512 |
| Description | RF TRANS NPN 25V 860MHZ M122 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,538 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MS1512 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MS1512 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MS1512 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 860MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 10dB |
| Power - Max | 19.4W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | 1.2A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | M122 |
| Supplier Device Package | M122 |
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Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 9GHz Noise Figure (dB Typ @ f) 1.2dB @ 1GHz Gain 13dB Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 8V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain 17.5dB ~ 21dB Power - Max 175mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA, 8V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package PG-SOT143-4 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5V Frequency - Transition 30GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz Gain 16dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 3.5V Current - Collector (Ic) (Max) 80mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
