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NDD04N50Z-1G

NDD04N50Z-1G

For Reference Only

Part Number NDD04N50Z-1G
PNEDA Part # NDD04N50Z-1G
Description MOSFET N-CH 500V 3A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,006
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD04N50Z-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD04N50Z-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD04N50Z-1G, NDD04N50Z-1G Datasheet (Total Pages: 8, Size: 118.62 KB)
PDFNDD04N50ZT4G Datasheet Cover
NDD04N50ZT4G Datasheet Page 2 NDD04N50ZT4G Datasheet Page 3 NDD04N50ZT4G Datasheet Page 4 NDD04N50ZT4G Datasheet Page 5 NDD04N50ZT4G Datasheet Page 6 NDD04N50ZT4G Datasheet Page 7 NDD04N50ZT4G Datasheet Page 8

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NDD04N50Z-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds308pF @ 25V
FET Feature-
Power Dissipation (Max)61W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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