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NE85619-T1

NE85619-T1

For Reference Only

Part Number NE85619-T1
PNEDA Part # NE85619-T1
Description RF TRANS NPN 12V 4.5GHZ SOT523
Manufacturer CEL
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE85619-T1 Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE85619-T1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE85619-T1, NE85619-T1 Datasheet (Total Pages: 26, Size: 827.19 KB)
PDFNE85633L-A Datasheet Cover
NE85633L-A Datasheet Page 2 NE85633L-A Datasheet Page 3 NE85633L-A Datasheet Page 4 NE85633L-A Datasheet Page 5 NE85633L-A Datasheet Page 6 NE85633L-A Datasheet Page 7 NE85633L-A Datasheet Page 8 NE85633L-A Datasheet Page 9 NE85633L-A Datasheet Page 10 NE85633L-A Datasheet Page 11

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NE85619-T1 Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain6.5dB ~ 12.5dB
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 20mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-523
Supplier Device PackageSOT-523

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Infineon Technologies

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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