NGTB40N120IHRWG
For Reference Only
| Part Number | NGTB40N120IHRWG |
| PNEDA Part # | NGTB40N120IHRWG |
| Description | IGBT 1200V 80A 384W TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTB40N120IHRWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTB40N120IHRWG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTB40N120IHRWG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 40A |
| Power - Max | 384W |
| Switching Energy | 950µJ (off) |
| Input Type | Standard |
| Gate Charge | 225nC |
| Td (on/off) @ 25°C | -/230ns |
| Test Condition | 600V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 21A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A Power - Max 167W Switching Energy 450µJ (on), 390µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 22ns/160ns Test Condition 960V, 5A, 25Ohm, 15V Reverse Recovery Time (trr) 65ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer IXYS Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 15A Power - Max 150W Switching Energy 1.75mJ (off) Input Type Standard Gate Charge 57nC Td (on/off) @ 25°C 30ns/148ns Test Condition 960V, 15A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 21A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 7A Power - Max 83W Switching Energy 99µJ (on), 104µJ (off) Input Type Standard Gate Charge 18nC Td (on/off) @ 25°C 5.9ns/32.3ns Test Condition 400V, 7A, 10Ohm, 15V Reverse Recovery Time (trr) 32.3ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB (D²PAK) |
