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NGTD13T65F2WP

NGTD13T65F2WP

For Reference Only

Part Number NGTD13T65F2WP
PNEDA Part # NGTD13T65F2WP
Description IGBT TRENCH FIELD STOP 650V DIE
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,410
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTD13T65F2WP Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTD13T65F2WP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTD13T65F2WP, NGTD13T65F2WP Datasheet (Total Pages: 3, Size: 98.68 KB)
PDFNGTD13T65F2WP Datasheet Cover
NGTD13T65F2WP Datasheet Page 2 NGTD13T65F2WP Datasheet Page 3

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NGTD13T65F2WP Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 30A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Current - Collector Pulsed (Icm)

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