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NJVMJD117T4G

NJVMJD117T4G

For Reference Only

Part Number NJVMJD117T4G
PNEDA Part # NJVMJD117T4G
Description TRANS PNP DARL 100V 2A DPAK-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJVMJD117T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJVMJD117T4G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
NJVMJD117T4G, NJVMJD117T4G Datasheet (Total Pages: 10, Size: 148.1 KB)
PDFMJD117RLG Datasheet Cover
MJD117RLG Datasheet Page 2 MJD117RLG Datasheet Page 3 MJD117RLG Datasheet Page 4 MJD117RLG Datasheet Page 5 MJD117RLG Datasheet Page 6 MJD117RLG Datasheet Page 7 MJD117RLG Datasheet Page 8 MJD117RLG Datasheet Page 9 MJD117RLG Datasheet Page 10

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NJVMJD117T4G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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