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NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY

For Reference Only

Part Number NP110N055PUJ-E1B-AY
PNEDA Part # NP110N055PUJ-E1B-AY
Description TRANSISTOR
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP110N055PUJ-E1B-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP110N055PUJ-E1B-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP110N055PUJ-E1B-AY, NP110N055PUJ-E1B-AY Datasheet (Total Pages: 10, Size: 311.12 KB)
PDFNP110N055PUJ-E1B-AY Datasheet Cover
NP110N055PUJ-E1B-AY Datasheet Page 2 NP110N055PUJ-E1B-AY Datasheet Page 3 NP110N055PUJ-E1B-AY Datasheet Page 4 NP110N055PUJ-E1B-AY Datasheet Page 5 NP110N055PUJ-E1B-AY Datasheet Page 6 NP110N055PUJ-E1B-AY Datasheet Page 7 NP110N055PUJ-E1B-AY Datasheet Page 8 NP110N055PUJ-E1B-AY Datasheet Page 9 NP110N055PUJ-E1B-AY Datasheet Page 10

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NP110N055PUJ-E1B-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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