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NP80N055NDG-S18-AY

NP80N055NDG-S18-AY

For Reference Only

Part Number NP80N055NDG-S18-AY
PNEDA Part # NP80N055NDG-S18-AY
Description MOSFET N-CH 55V 80A TO-262
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP80N055NDG-S18-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP80N055NDG-S18-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP80N055NDG-S18-AY, NP80N055NDG-S18-AY Datasheet (Total Pages: 12, Size: 346.75 KB)
PDFNP80N055NDG-S18-AY Datasheet Cover
NP80N055NDG-S18-AY Datasheet Page 2 NP80N055NDG-S18-AY Datasheet Page 3 NP80N055NDG-S18-AY Datasheet Page 4 NP80N055NDG-S18-AY Datasheet Page 5 NP80N055NDG-S18-AY Datasheet Page 6 NP80N055NDG-S18-AY Datasheet Page 7 NP80N055NDG-S18-AY Datasheet Page 8 NP80N055NDG-S18-AY Datasheet Page 9 NP80N055NDG-S18-AY Datasheet Page 10 NP80N055NDG-S18-AY Datasheet Page 11

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NP80N055NDG-S18-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6900pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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