NSVB114YPDXV6T1G
For Reference Only
| Part Number | NSVB114YPDXV6T1G |
| PNEDA Part # | NSVB114YPDXV6T1G |
| Description | TRANS BRT 50V 100MA SOT563 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,700 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NSVB114YPDXV6T1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NSVB114YPDXV6T1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NSVB114YPDXV6T1G Datasheet
- where to find NSVB114YPDXV6T1G
- ON Semiconductor
- ON Semiconductor NSVB114YPDXV6T1G
- NSVB114YPDXV6T1G PDF Datasheet
- NSVB114YPDXV6T1G Stock
- NSVB114YPDXV6T1G Pinout
- Datasheet NSVB114YPDXV6T1G
- NSVB114YPDXV6T1G Supplier
- ON Semiconductor Distributor
- NSVB114YPDXV6T1G Price
- NSVB114YPDXV6T1G Distributor
NSVB114YPDXV6T1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 Transistor Type NPN, PNP Complementary Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 100kOhms Resistor - Emitter Base (R2) 100kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - Frequency - Transition 250MHz Power - Max 270mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer Nexperia USA Inc. Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 230MHz, 180MHz Power - Max 350mW Mounting Type Surface Mount Package / Case 6-XFDFN Exposed Pad Supplier Device Package DFN1010B-6 |
Manufacturer Rohm Semiconductor Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) - Frequency - Transition 250MHz Power - Max 150mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package UMT6 |
Manufacturer ON Semiconductor Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2kOhms Resistor - Emitter Base (R2) 2.2kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 500mW Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SM6 |
