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NSVEMC2DXV5T1G

NSVEMC2DXV5T1G

For Reference Only

Part Number NSVEMC2DXV5T1G
PNEDA Part # NSVEMC2DXV5T1G
Description TRANS NPN/PNP 50V BIPOLAR SOT553
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVEMC2DXV5T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVEMC2DXV5T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSVEMC2DXV5T1G, NSVEMC2DXV5T1G Datasheet (Total Pages: 11, Size: 99.83 KB)
PDFEMC3DXV5T5 Datasheet Cover
EMC3DXV5T5 Datasheet Page 2 EMC3DXV5T5 Datasheet Page 3 EMC3DXV5T5 Datasheet Page 4 EMC3DXV5T5 Datasheet Page 5 EMC3DXV5T5 Datasheet Page 6 EMC3DXV5T5 Datasheet Page 7 EMC3DXV5T5 Datasheet Page 8 EMC3DXV5T5 Datasheet Page 9 EMC3DXV5T5 Datasheet Page 10 EMC3DXV5T5 Datasheet Page 11

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NSVEMC2DXV5T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageSOT-553

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