Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTB125N02RT4

NTB125N02RT4

For Reference Only

Part Number NTB125N02RT4
PNEDA Part # NTB125N02RT4
Description MOSFET N-CH 24V 15.9A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,194
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 1 - Jul 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTB125N02RT4 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTB125N02RT4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTB125N02RT4, NTB125N02RT4 Datasheet (Total Pages: 7, Size: 84.67 KB)
PDFNTB125N02RG Datasheet Cover
NTB125N02RG Datasheet Page 2 NTB125N02RG Datasheet Page 3 NTB125N02RG Datasheet Page 4 NTB125N02RG Datasheet Page 5 NTB125N02RG Datasheet Page 6 NTB125N02RG Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTB125N02RT4 Datasheet
  • where to find NTB125N02RT4
  • ON Semiconductor

  • ON Semiconductor NTB125N02RT4
  • NTB125N02RT4 PDF Datasheet
  • NTB125N02RT4 Stock

  • NTB125N02RT4 Pinout
  • Datasheet NTB125N02RT4
  • NTB125N02RT4 Supplier

  • ON Semiconductor Distributor
  • NTB125N02RT4 Price
  • NTB125N02RT4 Distributor

NTB125N02RT4 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C95A (Ta), 120.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3440pF @ 20V
FET Feature-
Power Dissipation (Max)1.98W (Ta), 113.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NTMSD3P102R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.34A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

85mOhm @ 3.05A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 16V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

730mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRL3102S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V

Rds On (Max) @ Id, Vgs

13mOhm @ 37A, 7V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 15V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPD25N06S4L30ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.2V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

16.3nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1220pF @ 25V

FET Feature

-

Power Dissipation (Max)

29W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

CPMF-1200-S160B

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

Z-FET™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

28A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

220mOhm @ 10A, 20V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

47.1nC @ 20V

Vgs (Max)

+25V, -5V

Input Capacitance (Ciss) (Max) @ Vds

928pF @ 800V

FET Feature

-

Power Dissipation (Max)

202W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

IRFB7434GPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

324nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10820pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

MAX6315US31D3+T

MAX6315US31D3+T

Maxim Integrated

IC RESET CIRCUIT 3.08V SOT143-4

ADP150AUJZ-1.8-R7

ADP150AUJZ-1.8-R7

Analog Devices

IC REG LINEAR 1.8V 150MA TSOT5

LTST-C190KGKT

LTST-C190KGKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

BM1422AGMV-ZE2

BM1422AGMV-ZE2

Rohm Semiconductor

SENSOR MR I2C MLGA010V020A

AD8109ASTZ

AD8109ASTZ

Analog Devices

IC VIDEO CROSSPOINT SWIT 80LQFP

LT6350HMS8#PBF

LT6350HMS8#PBF

Linear Technology/Analog Devices

IC DIFF CONVERT/ADC DRIVER 8MSOP

BZX84C3V3

BZX84C3V3

ON Semiconductor

DIODE ZENER 3.3V 350MW SOT23-3

MCH3478-TL-W

MCH3478-TL-W

ON Semiconductor

MOSFET N-CH 30V 2A MCPH3

ADA4091-2ACPZ-RL

ADA4091-2ACPZ-RL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8LFCSP

687ALG025MGBJ

687ALG025MGBJ

Illinois Capacitor

CAP ALUM POLY 680UF 20% 25V T/H

IHLP6767GZER8R2M11

IHLP6767GZER8R2M11

Vishay Dale

FIXED IND 8.2UH 21A 8.1 MOHM SMD

HEF4538BT,653

HEF4538BT,653

Nexperia

IC MONO MULTIVBRTOR DUAL 16SOIC