Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTB22N06LT4

NTB22N06LT4

For Reference Only

Part Number NTB22N06LT4
PNEDA Part # NTB22N06LT4
Description MOSFET N-CH 60V 22A D2PAK-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTB22N06LT4 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTB22N06LT4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTB22N06LT4, NTB22N06LT4 Datasheet (Total Pages: 7, Size: 194.54 KB)
PDFNTP22N06L Datasheet Cover
NTP22N06L Datasheet Page 2 NTP22N06L Datasheet Page 3 NTP22N06L Datasheet Page 4 NTP22N06L Datasheet Page 5 NTP22N06L Datasheet Page 6 NTP22N06L Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTB22N06LT4 Datasheet
  • where to find NTB22N06LT4
  • ON Semiconductor

  • ON Semiconductor NTB22N06LT4
  • NTB22N06LT4 PDF Datasheet
  • NTB22N06LT4 Stock

  • NTB22N06LT4 Pinout
  • Datasheet NTB22N06LT4
  • NTB22N06LT4 Supplier

  • ON Semiconductor Distributor
  • NTB22N06LT4 Price
  • NTB22N06LT4 Distributor

NTB22N06LT4 Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs65mOhm @ 11A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 25V
FET Feature-
Power Dissipation (Max)60W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRF6619TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5040pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

STL33N60DM2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1870pF @ 100V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (8x8) HV

Package / Case

8-PowerVDFN

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

FET Feature

-

Power Dissipation (Max)

660W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

HUFA76432P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 59A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1765pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

RS1L180GNTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

18A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3230pF @ 30V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

Recently Sold

FAN1112SX

FAN1112SX

ON Semiconductor

IC REG LINEAR 1.2V 1A SOT223-4

T495D477K006ATE125

T495D477K006ATE125

KEMET

CAP TANT 470UF 10% 6.3V 2917

0458002.DR

0458002.DR

Littelfuse

FUSE BRD MNT 2A 48VAC 75VDC 1206

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP

IXGA20N120A3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

IRLML9301TRPBF

IRLML9301TRPBF

Infineon Technologies

MOSFET P-CH 30V 3.6A SOT-23-3

IR2151

IR2151

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8-DIP

TL1014BF160QG

TL1014BF160QG

E-Switch

SWITCH TACTILE SPST-NO 0.05A 12V

219-2MSTR

219-2MSTR

CTS Electrocomponents

SWITCH SLIDE DIP SPST 100MA 20V

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

BFG591,115

BFG591,115

NXP

RF TRANS NPN 15V 7GHZ SOT223