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NTBV5605T4G

NTBV5605T4G

For Reference Only

Part Number NTBV5605T4G
PNEDA Part # NTBV5605T4G
Description MOSFET P-CH 60V 18.5A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
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NTBV5605T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTBV5605T4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTBV5605T4G, NTBV5605T4G Datasheet (Total Pages: 7, Size: 124.71 KB)
PDFNTB5605T4G Datasheet Cover
NTB5605T4G Datasheet Page 2 NTB5605T4G Datasheet Page 3 NTB5605T4G Datasheet Page 4 NTB5605T4G Datasheet Page 5 NTB5605T4G Datasheet Page 6 NTB5605T4G Datasheet Page 7

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NTBV5605T4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1190pF @ 25V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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