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NTD4806N-1G

NTD4806N-1G

For Reference Only

Part Number NTD4806N-1G
PNEDA Part # NTD4806N-1G
Description MOSFET N-CH 30V 11A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4806N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4806N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4806N-1G, NTD4806N-1G Datasheet (Total Pages: 8, Size: 128.05 KB)
PDFNVD4806NT4G Datasheet Cover
NVD4806NT4G Datasheet Page 2 NVD4806NT4G Datasheet Page 3 NVD4806NT4G Datasheet Page 4 NVD4806NT4G Datasheet Page 5 NVD4806NT4G Datasheet Page 6 NVD4806NT4G Datasheet Page 7 NVD4806NT4G Datasheet Page 8

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NTD4806N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2142pF @ 12V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Stub Leads, IPak

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