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NTD6600N-1G

NTD6600N-1G

For Reference Only

Part Number NTD6600N-1G
PNEDA Part # NTD6600N-1G
Description MOSFET N-CH 100V 12A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD6600N-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD6600N-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD6600N-1G, NTD6600N-1G Datasheet (Total Pages: 6, Size: 64.2 KB)
PDFNTD6600N-1G Datasheet Cover
NTD6600N-1G Datasheet Page 2 NTD6600N-1G Datasheet Page 3 NTD6600N-1G Datasheet Page 4 NTD6600N-1G Datasheet Page 5 NTD6600N-1G Datasheet Page 6

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NTD6600N-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs146mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
FET Feature-
Power Dissipation (Max)1.28W (Ta), 56.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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