Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTHD3133PFT3G

NTHD3133PFT3G

For Reference Only

Part Number NTHD3133PFT3G
PNEDA Part # NTHD3133PFT3G
Description MOSFET P-CH 20V 3.2A CHIPFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,478
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTHD3133PFT3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTHD3133PFT3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTHD3133PFT3G, NTHD3133PFT3G Datasheet (Total Pages: 7, Size: 92.16 KB)
PDFNTHD3133PFT3G Datasheet Cover
NTHD3133PFT3G Datasheet Page 2 NTHD3133PFT3G Datasheet Page 3 NTHD3133PFT3G Datasheet Page 4 NTHD3133PFT3G Datasheet Page 5 NTHD3133PFT3G Datasheet Page 6 NTHD3133PFT3G Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTHD3133PFT3G Datasheet
  • where to find NTHD3133PFT3G
  • ON Semiconductor

  • ON Semiconductor NTHD3133PFT3G
  • NTHD3133PFT3G PDF Datasheet
  • NTHD3133PFT3G Stock

  • NTHD3133PFT3G Pinout
  • Datasheet NTHD3133PFT3G
  • NTHD3133PFT3G Supplier

  • ON Semiconductor Distributor
  • NTHD3133PFT3G Price
  • NTHD3133PFT3G Distributor

NTHD3133PFT3G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs80mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.4nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

The Products You May Be Interested In

FQA16N25C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

17.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1080pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

TSM10N60CZ C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1738pF @ 25V

FET Feature

-

Power Dissipation (Max)

166W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRLI630G

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

400mOhm @ 3.7A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

AOI4T60P

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

522pF @ 100V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251

Package / Case

TO-251-3 Stub Leads, IPak

DMP2008UFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

8mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

6909pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

Recently Sold

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

LTST-C190KGKT

LTST-C190KGKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

HCPL-0531-500E

HCPL-0531-500E

Broadcom

OPTOISO 3.75KV 2CH TRANS 8SOIC

MAX1680ESA

MAX1680ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

IRF630NPBF

IRF630NPBF

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

A3P250-VQG100I

A3P250-VQG100I

Microsemi

IC FPGA 68 I/O 100VQFP

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

2N7002-7-F

2N7002-7-F

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

EPM7064STC44-10N

EPM7064STC44-10N

Intel

IC CPLD 64MC 10NS 44TQFP

4608X-101-102LF

4608X-101-102LF

Bourns

RES ARRAY 7 RES 1K OHM 8SIP

CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI

Cypress Semiconductor

IC SRAM 64M PARALLEL 48FBGA