Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTMFD4951NFT1G

NTMFD4951NFT1G

For Reference Only

Part Number NTMFD4951NFT1G
PNEDA Part # NTMFD4951NFT1G
Description MOSFET N-CH 30V 10.8A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFD4951NFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFD4951NFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTMFD4951NFT1G Datasheet
  • where to find NTMFD4951NFT1G
  • ON Semiconductor

  • ON Semiconductor NTMFD4951NFT1G
  • NTMFD4951NFT1G PDF Datasheet
  • NTMFD4951NFT1G Stock

  • NTMFD4951NFT1G Pinout
  • Datasheet NTMFD4951NFT1G
  • NTMFD4951NFT1G Supplier

  • ON Semiconductor Distributor
  • NTMFD4951NFT1G Price
  • NTMFD4951NFT1G Distributor

NTMFD4951NFT1G Specifications

ManufacturerON Semiconductor
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

SSM3K56ACT,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

235mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CST3

Package / Case

SC-101, SOT-883

SI1442DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1010pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta), 2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

Manufacturer

NXP USA Inc.

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 15V

FET Feature

-

Power Dissipation (Max)

250mW (Ta), 770mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75

Package / Case

SC-75, SOT-416

IPD60R600E6

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

20.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 100V

FET Feature

-

Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRLS3114Z

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 56A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3617pF @ 25V

FET Feature

-

Power Dissipation (Max)

143W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252AA)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

EEE-FK1V100R

EEE-FK1V100R

Panasonic Electronic Components

CAP ALUM 10UF 20% 35V SMD

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

SI1865DDL-T1-GE3

SI1865DDL-T1-GE3

Vishay Siliconix

IC LOAD SW LVL SHIFT SC70-6

STM32F030R8T6TR

STM32F030R8T6TR

STMicroelectronics

IC MCU 32BIT 64KB FLASH 64LQFP

ADG5421BCPZ-RL7

ADG5421BCPZ-RL7

Analog Devices

IC SWITCH SPST DUAL 10LFCSP

BLM31PG500SN1L

BLM31PG500SN1L

Murata

FERRITE BEAD 50 OHM 1206 1LN

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

DN2540N8-G

DN2540N8-G

Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

ADP5054ACPZ-R7

ADP5054ACPZ-R7

Analog Devices

IC REG CTRLR BUCK 48LFCSP

LH1511BAB

LH1511BAB

Vishay Semiconductor Opto Division

SSR RELAY SPST-NC 200MA 0-200V

564R60GAT22

564R60GAT22

Vishay Cera-Mite

CAP CER 220PF 6KV X5F RADIAL

AS4C256M16D3B-12BIN

AS4C256M16D3B-12BIN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA