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SI1442DH-T1-GE3

SI1442DH-T1-GE3

For Reference Only

Part Number SI1442DH-T1-GE3
PNEDA Part # SI1442DH-T1-GE3
Description MOSFET N-CH 12V 4A SOT-363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 42,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1442DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1442DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1442DH-T1-GE3, SI1442DH-T1-GE3 Datasheet (Total Pages: 12, Size: 267.07 KB)
PDFSI1442DH-T1-GE3 Datasheet Cover
SI1442DH-T1-GE3 Datasheet Page 2 SI1442DH-T1-GE3 Datasheet Page 3 SI1442DH-T1-GE3 Datasheet Page 4 SI1442DH-T1-GE3 Datasheet Page 5 SI1442DH-T1-GE3 Datasheet Page 6 SI1442DH-T1-GE3 Datasheet Page 7 SI1442DH-T1-GE3 Datasheet Page 8 SI1442DH-T1-GE3 Datasheet Page 9 SI1442DH-T1-GE3 Datasheet Page 10 SI1442DH-T1-GE3 Datasheet Page 11

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SI1442DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1010pF @ 6V
FET Feature-
Power Dissipation (Max)1.56W (Ta), 2.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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