Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTMFS5830NLT1G

NTMFS5830NLT1G

For Reference Only

Part Number NTMFS5830NLT1G
PNEDA Part # NTMFS5830NLT1G
Description MOSFET N-CH 40V 28A SO-8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS5830NLT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS5830NLT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS5830NLT1G, NTMFS5830NLT1G Datasheet (Total Pages: 6, Size: 108.18 KB)
PDFNTMFS5830NLT1G Datasheet Cover
NTMFS5830NLT1G Datasheet Page 2 NTMFS5830NLT1G Datasheet Page 3 NTMFS5830NLT1G Datasheet Page 4 NTMFS5830NLT1G Datasheet Page 5 NTMFS5830NLT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTMFS5830NLT1G Datasheet
  • where to find NTMFS5830NLT1G
  • ON Semiconductor

  • ON Semiconductor NTMFS5830NLT1G
  • NTMFS5830NLT1G PDF Datasheet
  • NTMFS5830NLT1G Stock

  • NTMFS5830NLT1G Pinout
  • Datasheet NTMFS5830NLT1G
  • NTMFS5830NLT1G Supplier

  • ON Semiconductor Distributor
  • NTMFS5830NLT1G Price
  • NTMFS5830NLT1G Distributor

NTMFS5830NLT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C28A (Ta), 172A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs113nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5880pF @ 25V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

The Products You May Be Interested In

DMNH4005SPSQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

2847pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.8W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

2N7000-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

SPA15N60C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id

3.9V @ 675µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1660pF @ 25V

FET Feature

-

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

IXFP16N50P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2250pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SIRA18ADP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

FET Feature

-

Power Dissipation (Max)

14.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

EL5211IYEZ-T13

EL5211IYEZ-T13

Renesas Electronics America Inc.

IC OPAMP VFB 2 CIRCUIT 8HMSOP

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

LTM4630AEY#PBF

LTM4630AEY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.3V

93LC46C-I/SN

93LC46C-I/SN

Microchip Technology

IC EEPROM 1K SPI 3MHZ 8SOIC

MCP42050-E/SL

MCP42050-E/SL

Microchip Technology

IC DGTL POT 50KOHM 256TAP 14SOIC

PD55015-E

PD55015-E

STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

PEX8603-AB50NI G

PEX8603-AB50NI G

Broadcom

IC PCI EXPRESS SWITCH 136AQFN

LTW-C191DS5

LTW-C191DS5

Lite-On Inc.

LED WHITE CHIP SMD

7508110151

7508110151

Wurth Electronics Midcom

WE-UNIT OFFLINE TRANSFORMER

BZV55C5V1

BZV55C5V1

Microsemi

DIODE ZENER 5.1V DO213AA

MT29F8G16ABACAWP:C

MT29F8G16ABACAWP:C

Micron Technology Inc.

IC FLASH 8G PARALLEL 48TSOP I