NTMFS6H848NT1G
For Reference Only
| Part Number | NTMFS6H848NT1G |
| PNEDA Part # | NTMFS6H848NT1G |
| Description | T8 80V SG SO-8FL-U8FL |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,982 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NTMFS6H848NT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NTMFS6H848NT1G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NTMFS6H848NT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 57A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 73W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3 |
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.44nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V FET Feature - Power Dissipation (Max) 230mW (Ta), 1.06W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75 Package / Case SC-75, SOT-416 |
