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NTMS5835NLR2G

NTMS5835NLR2G

For Reference Only

Part Number NTMS5835NLR2G
PNEDA Part # NTMS5835NLR2G
Manufacturer ON Semiconductor
Description MOSFET N-CH 40V 9.2A 8SOIC
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 3,168
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Oct 20 - Oct 25 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

NTMS5835NLR2G Resources

Brand ON Semiconductor
Mfr. Part NumberNTMS5835NLR2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMS5835NLR2G, NTMS5835NLR2G Datasheet (Total Pages: 6, Size: 109.87 KB)
PDFNTMS5835NLR2G Datasheet Cover
NTMS5835NLR2G Datasheet Page 2 NTMS5835NLR2G Datasheet Page 3 NTMS5835NLR2G Datasheet Page 4 NTMS5835NLR2G Datasheet Page 5 NTMS5835NLR2G Datasheet Page 6

NTMS5835NLR2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2115pF @ 20V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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