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NTP082N65S3F

NTP082N65S3F

For Reference Only

Part Number NTP082N65S3F
PNEDA Part # NTP082N65S3F
Description MOSFET N-CH 650V 82 MOHM TO220 P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTP082N65S3F Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTP082N65S3F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTP082N65S3F, NTP082N65S3F Datasheet (Total Pages: 10, Size: 379.56 KB)
PDFNTP082N65S3F Datasheet Cover
NTP082N65S3F Datasheet Page 2 NTP082N65S3F Datasheet Page 3 NTP082N65S3F Datasheet Page 4 NTP082N65S3F Datasheet Page 5 NTP082N65S3F Datasheet Page 6 NTP082N65S3F Datasheet Page 7 NTP082N65S3F Datasheet Page 8 NTP082N65S3F Datasheet Page 9 NTP082N65S3F Datasheet Page 10

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NTP082N65S3F Specifications

ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 20A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3410pF @ 400V
FET Feature-
Power Dissipation (Max)313W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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