Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTTFS008N04CTAG

NTTFS008N04CTAG

For Reference Only

Part Number NTTFS008N04CTAG
PNEDA Part # NTTFS008N04CTAG
Description T6 40V SG NCH U8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTTFS008N04CTAG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTTFS008N04CTAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTTFS008N04CTAG, NTTFS008N04CTAG Datasheet (Total Pages: 6, Size: 122.02 KB)
PDFNTTFS008N04CTAG Datasheet Cover
NTTFS008N04CTAG Datasheet Page 2 NTTFS008N04CTAG Datasheet Page 3 NTTFS008N04CTAG Datasheet Page 4 NTTFS008N04CTAG Datasheet Page 5 NTTFS008N04CTAG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTTFS008N04CTAG Datasheet
  • where to find NTTFS008N04CTAG
  • ON Semiconductor

  • ON Semiconductor NTTFS008N04CTAG
  • NTTFS008N04CTAG PDF Datasheet
  • NTTFS008N04CTAG Stock

  • NTTFS008N04CTAG Pinout
  • Datasheet NTTFS008N04CTAG
  • NTTFS008N04CTAG Supplier

  • ON Semiconductor Distributor
  • NTTFS008N04CTAG Price
  • NTTFS008N04CTAG Distributor

NTTFS008N04CTAG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds625pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5400pF @ 25V

FET Feature

-

Power Dissipation (Max)

543W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

DMT6016LFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

864pF @ 30V

FET Feature

-

Power Dissipation (Max)

820mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

NTY100N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

123A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

350nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10110pF @ 25V

FET Feature

-

Power Dissipation (Max)

313W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264

Package / Case

TO-264-3, TO-264AA

NTMFS4C705NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRFBC20L

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

PI3USB30532ZLE

PI3USB30532ZLE

Diodes Incorporated

IC MUX/DEMUX USB 3.0 40TQFN

SMAJ30CA

SMAJ30CA

Bourns

TVS DIODE 30V 48.4V SMA

PDS760-13

PDS760-13

Diodes Incorporated

DIODE SCHOTTKY 60V 7A POWERDI5

SESD0402X1BN-0010-098

SESD0402X1BN-0010-098

Littelfuse

TVS DIODE 7V 10V 0402

DS1225AD-150IND

DS1225AD-150IND

Maxim Integrated

IC NVSRAM 64K PARALLEL 28EDIP

M24256-BRMN6TP

M24256-BRMN6TP

STMicroelectronics

IC EEPROM 256K I2C 1MHZ 8SO

NDT3055L

NDT3055L

ON Semiconductor

MOSFET N-CH 60V 4A SOT-223-4

SP0502BAHTG

SP0502BAHTG

Littelfuse

TVS DIODE 5.5V 8.5V SOT23-3

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

STPS1H100A

STPS1H100A

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

IRAMX16UP60B-2

IRAMX16UP60B-2

Infineon Technologies

IC PWR HYBRID 600V 16A SIP2

LTST-C171GKT

LTST-C171GKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD