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NVATS4A102PZT4G

NVATS4A102PZT4G

For Reference Only

Part Number NVATS4A102PZT4G
PNEDA Part # NVATS4A102PZT4G
Description MOSFET P-CHANNEL 30V 44A ATPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVATS4A102PZT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVATS4A102PZT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVATS4A102PZT4G, NVATS4A102PZT4G Datasheet (Total Pages: 6, Size: 426.95 KB)
PDFNVATS4A102PZT4G Datasheet Cover
NVATS4A102PZT4G Datasheet Page 2 NVATS4A102PZT4G Datasheet Page 3 NVATS4A102PZT4G Datasheet Page 4 NVATS4A102PZT4G Datasheet Page 5 NVATS4A102PZT4G Datasheet Page 6

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NVATS4A102PZT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 10V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageATPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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