NVD5C478NLT4G
For Reference Only
| Part Number | NVD5C478NLT4G |
| PNEDA Part # | NVD5C478NLT4G |
| Description | T6 40V DPAK EXPANSION AND |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,114 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NVD5C478NLT4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVD5C478NLT4G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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NVD5C478NLT4G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 30W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 400A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3mOhm @ 200A, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 365nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23.7nF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 Package / Case TO-264-3, TO-264AA |
