NVD6820NLT4G-VF01
For Reference Only
| Part Number | NVD6820NLT4G-VF01 |
| PNEDA Part # | NVD6820NLT4G-VF01 |
| Description | MOSFET N-CH 90V 50A DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,508 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NVD6820NLT4G-VF01 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVD6820NLT4G-VF01 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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NVD6820NLT4G-VF01 Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 90V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 16.7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 83nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4209pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 1A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 172pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-MCPH Package / Case 6-SMD, Flat Leads |
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Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
