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NVGS5120PT1G

NVGS5120PT1G

For Reference Only

Part Number NVGS5120PT1G
PNEDA Part # NVGS5120PT1G
Description MOSFET P-CH 60V 1.8A 6TSOP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
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NVGS5120PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVGS5120PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVGS5120PT1G, NVGS5120PT1G Datasheet (Total Pages: 6, Size: 124.75 KB)
PDFNVGS5120PT1G Datasheet Cover
NVGS5120PT1G Datasheet Page 2 NVGS5120PT1G Datasheet Page 3 NVGS5120PT1G Datasheet Page 4 NVGS5120PT1G Datasheet Page 5 NVGS5120PT1G Datasheet Page 6

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NVGS5120PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs111mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds942pF @ 30V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6

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