PH1955L,115
For Reference Only
| Part Number | PH1955L,115 |
| PNEDA Part # | PH1955L-115 |
| Description | MOSFET N-CH 55V 40A LFPAK |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 7,074 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 21 - May 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
PH1955L Resources
| Brand | NXP |
| ECAD Module |
|
| Mfr. Part Number | PH1955L,115 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- PH1955L,115 Datasheet
- where to find PH1955L,115
- NXP
- NXP PH1955L,115
- PH1955L,115 PDF Datasheet
- PH1955L,115 Stock
- PH1955L,115 Pinout
- Datasheet PH1955L,115
- PH1955L,115 Supplier
- NXP Distributor
- PH1955L,115 Price
- PH1955L,115 Distributor
PH1955L Specifications
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 17.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1992pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
The Products You May Be Interested In
|
Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.65Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 370pF @ 25V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.72nC @ 4.5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TLM621H Package / Case 6-XFDFN Exposed Pad |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 23A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7990pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package SUPER-247™ (TO-274AA) Package / Case TO-274AA |
Manufacturer Infineon Technologies Series CoolSiC™ FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1.2kV Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 18V Rds On (Max) @ Id, Vgs 220mOhm @ 4A, 18V Vgs(th) (Max) @ Id 5.7V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 18V Vgs (Max) +23V, -7V Input Capacitance (Ciss) (Max) @ Vds 289pF @ 800V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-4-1 Package / Case TO-247-4 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 185mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id 5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3160pF @ 25V FET Feature - Power Dissipation (Max) 240W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
