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PHB193NQ06T,118

PHB193NQ06T,118

For Reference Only

Part Number PHB193NQ06T,118
PNEDA Part # PHB193NQ06T-118
Description MOSFET N-CH 55V 75A D2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,474
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHB193NQ06T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHB193NQ06T,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHB193NQ06T, PHB193NQ06T Datasheet (Total Pages: 13, Size: 92.76 KB)
PDFPHP193NQ06T Datasheet Cover
PHP193NQ06T Datasheet Page 2 PHP193NQ06T Datasheet Page 3 PHP193NQ06T Datasheet Page 4 PHP193NQ06T Datasheet Page 5 PHP193NQ06T Datasheet Page 6 PHP193NQ06T Datasheet Page 7 PHP193NQ06T Datasheet Page 8 PHP193NQ06T Datasheet Page 9 PHP193NQ06T Datasheet Page 10 PHP193NQ06T Datasheet Page 11

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PHB193NQ06T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs85.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5082pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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