PHT2NQ10T,135
For Reference Only
| Part Number | PHT2NQ10T,135 |
| PNEDA Part # | PHT2NQ10T-135 |
| Description | MOSFET N-CH 100V 2.5A SOT223 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 2,088 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PHT2NQ10T Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | PHT2NQ10T,135 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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PHT2NQ10T Specifications
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 1.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
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