Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PSMN0R9-30YLDX

PSMN0R9-30YLDX

For Reference Only

Part Number PSMN0R9-30YLDX
PNEDA Part # PSMN0R9-30YLDX
Description MOSFET N-CH 30V 300A 56LFPAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 94,470
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN0R9-30YLDX Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN0R9-30YLDX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN0R9-30YLDX, PSMN0R9-30YLDX Datasheet (Total Pages: 13, Size: 717.2 KB)
PDFPSMN0R9-30YLDX Datasheet Cover
PSMN0R9-30YLDX Datasheet Page 2 PSMN0R9-30YLDX Datasheet Page 3 PSMN0R9-30YLDX Datasheet Page 4 PSMN0R9-30YLDX Datasheet Page 5 PSMN0R9-30YLDX Datasheet Page 6 PSMN0R9-30YLDX Datasheet Page 7 PSMN0R9-30YLDX Datasheet Page 8 PSMN0R9-30YLDX Datasheet Page 9 PSMN0R9-30YLDX Datasheet Page 10 PSMN0R9-30YLDX Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PSMN0R9-30YLDX Datasheet
  • where to find PSMN0R9-30YLDX
  • Nexperia

  • Nexperia PSMN0R9-30YLDX
  • PSMN0R9-30YLDX PDF Datasheet
  • PSMN0R9-30YLDX Stock

  • PSMN0R9-30YLDX Pinout
  • Datasheet PSMN0R9-30YLDX
  • PSMN0R9-30YLDX Supplier

  • Nexperia Distributor
  • PSMN0R9-30YLDX Price
  • PSMN0R9-30YLDX Distributor

PSMN0R9-30YLDX Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C300A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.87mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs109nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7668pF @ 15V
FET Feature-
Power Dissipation (Max)291W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSOT-1023, 4-LFPAK

The Products You May Be Interested In

TPN11006NL,LQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.4mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 30V

FET Feature

-

Power Dissipation (Max)

700mW (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

DMP2541UCB9-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

3.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

-6V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 10V

FET Feature

-

Power Dissipation (Max)

940mW (Ta)

Operating Temperature

-55°C ~ 155°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-WLB1515-9

Package / Case

9-UFBGA, WLBGA

SIR878DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 44.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPD60R2K0C6BTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 100V

FET Feature

-

Power Dissipation (Max)

22.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMN2500UFB4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

810mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

400mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

60.67pF @ 16V

FET Feature

-

Power Dissipation (Max)

460mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN

Recently Sold

ADG658YRUZ

ADG658YRUZ

Analog Devices

IC MULTIPLEXER 8X1 16TSSOP

MTFC8GAKAJCN-4M IT

MTFC8GAKAJCN-4M IT

Micron Technology Inc.

IC FLASH 64G MMC

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

KA7810AETU

KA7810AETU

ON Semiconductor

IC REG LINEAR 10V 1A TO220-3

FAN3111ESX

FAN3111ESX

ON Semiconductor

IC GATE DVR SGL 1A EXTER SOT23-5

MB96F696RBPMC-GSE1

MB96F696RBPMC-GSE1

Cypress Semiconductor

IC MCU 16BIT 288KB FLASH 100LQFP

1N4007-TP

1N4007-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

ES1JAF

ES1JAF

ON Semiconductor

DIODE GEN PURP 600V 1A DO214AD

S3A-13-F

S3A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 3A SMC

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA

LTC6363IMS8#PBF

LTC6363IMS8#PBF

Linear Technology/Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8MSOP

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP