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STP7N65M2

STP7N65M2

For Reference Only

Part Number STP7N65M2
PNEDA Part # STP7N65M2
Description MOSFET N-CH 650V 5A TO-220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 17,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP7N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP7N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP7N65M2, STP7N65M2 Datasheet (Total Pages: 18, Size: 876.01 KB)
PDFSTP7N65M2 Datasheet Cover
STP7N65M2 Datasheet Page 2 STP7N65M2 Datasheet Page 3 STP7N65M2 Datasheet Page 4 STP7N65M2 Datasheet Page 5 STP7N65M2 Datasheet Page 6 STP7N65M2 Datasheet Page 7 STP7N65M2 Datasheet Page 8 STP7N65M2 Datasheet Page 9 STP7N65M2 Datasheet Page 10 STP7N65M2 Datasheet Page 11

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STP7N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.15Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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