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PSMN3R3-80ES,127

PSMN3R3-80ES,127

For Reference Only

Part Number PSMN3R3-80ES,127
PNEDA Part # PSMN3R3-80ES-127
Description MOSFET N-CH 80V 120A I2PAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 6,822
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN3R3-80ES Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN3R3-80ES,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN3R3-80ES, PSMN3R3-80ES Datasheet (Total Pages: 14, Size: 800.02 KB)
PDFPSMN3R3-80ES Datasheet Cover
PSMN3R3-80ES Datasheet Page 2 PSMN3R3-80ES Datasheet Page 3 PSMN3R3-80ES Datasheet Page 4 PSMN3R3-80ES Datasheet Page 5 PSMN3R3-80ES Datasheet Page 6 PSMN3R3-80ES Datasheet Page 7 PSMN3R3-80ES Datasheet Page 8 PSMN3R3-80ES Datasheet Page 9 PSMN3R3-80ES Datasheet Page 10 PSMN3R3-80ES Datasheet Page 11

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PSMN3R3-80ES Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs139nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9961pF @ 40V
FET Feature-
Power Dissipation (Max)338W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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