RF101LAM2STR
For Reference Only
| Part Number | RF101LAM2STR |
| PNEDA Part # | RF101LAM2STR |
| Description | DIODE GEN PURP 200V 1A PMDTM |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 28,386 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RF101LAM2STR Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RF101LAM2STR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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RF101LAM2STR Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 870mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25ns |
| Current - Reverse Leakage @ Vr | 10µA @ 200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | SOD-128 |
| Supplier Device Package | PMDTM |
| Operating Temperature - Junction | 150°C (Max) |
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Manufacturer Comchip Technology Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 3A (DC) Voltage - Forward (Vf) (Max) @ If 450mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 40V Capacitance @ Vr, F 250pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package DO-214AC (SMA) Operating Temperature - Junction -50°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 1V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-5 Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F 10pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 7.5µs Current - Reverse Leakage @ Vr 1µA @ 800V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Through Hole Package / Case SOD-64, Axial Supplier Device Package SOD-64 Operating Temperature - Junction -55°C ~ 175°C |
