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RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2

For Reference Only

Part Number RJH65D27BDPQ-A0#T2
PNEDA Part # RJH65D27BDPQ-A0-T2
Description IGBT TRENCH 650V 100A TO247A
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJH65D27BDPQ-A0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJH65D27BDPQ-A0#T2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
RJH65D27BDPQ-A0#T2, RJH65D27BDPQ-A0#T2 Datasheet (Total Pages: 11, Size: 582.3 KB)
PDFRJH65D27BDPQ-A0#T2 Datasheet Cover
RJH65D27BDPQ-A0#T2 Datasheet Page 2 RJH65D27BDPQ-A0#T2 Datasheet Page 3 RJH65D27BDPQ-A0#T2 Datasheet Page 4 RJH65D27BDPQ-A0#T2 Datasheet Page 5 RJH65D27BDPQ-A0#T2 Datasheet Page 6 RJH65D27BDPQ-A0#T2 Datasheet Page 7 RJH65D27BDPQ-A0#T2 Datasheet Page 8 RJH65D27BDPQ-A0#T2 Datasheet Page 9 RJH65D27BDPQ-A0#T2 Datasheet Page 10 RJH65D27BDPQ-A0#T2 Datasheet Page 11

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RJH65D27BDPQ-A0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic1.65V @ 15V, 50A
Power - Max375W
Switching Energy1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge175nC
Td (on/off) @ 25°C20ns/165ns
Test Condition400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)80ns
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247A

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

800A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 160A

Power - Max

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Switching Energy

3.5mJ (on), 1.3mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

590µJ (on), 180µJ (off)

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Gate Charge

18.5nC

Td (on/off) @ 25°C

46ns/220ns

Test Condition

850V, 6A, 33Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 40A

Power - Max

180W

Switching Energy

409µJ (on), 838µJ (off)

Input Type

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Gate Charge

73nC

Td (on/off) @ 25°C

18ns/144ns

Test Condition

240V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

122ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

IXGT24N60C

IXYS

Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

48A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Power - Max

150W

Switching Energy

240µJ (off)

Input Type

Standard

Gate Charge

55nC

Td (on/off) @ 25°C

15ns/75ns

Test Condition

480V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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