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RJP60F0DPE-00#J3

RJP60F0DPE-00#J3

For Reference Only

Part Number RJP60F0DPE-00#J3
PNEDA Part # RJP60F0DPE-00-J3
Description IGBT 600V 50A 122W LDPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,452
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJP60F0DPE-00#J3 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJP60F0DPE-00#J3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
RJP60F0DPE-00#J3, RJP60F0DPE-00#J3 Datasheet (Total Pages: 7, Size: 81.99 KB)
PDFRJP60F0DPE-00#J3 Datasheet Cover
RJP60F0DPE-00#J3 Datasheet Page 2 RJP60F0DPE-00#J3 Datasheet Page 3 RJP60F0DPE-00#J3 Datasheet Page 4 RJP60F0DPE-00#J3 Datasheet Page 5 RJP60F0DPE-00#J3 Datasheet Page 6 RJP60F0DPE-00#J3 Datasheet Page 7

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RJP60F0DPE-00#J3 Specifications

ManufacturerRenesas Electronics America
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic1.82V @ 15V, 25A
Power - Max122W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C46ns/70ns
Test Condition400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-83
Supplier Device Package4-LDPAK

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

250A

Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

196nC

Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

-55°C ~ 150°C (TJ)

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 25A

Power - Max

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Switching Energy

600µJ (on), 700µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

29ns/130ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

400V, 50A, 7Ohm, 15V

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-40°C ~ 175°C (TJ)

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

74µJ (on), 39µJ (off)

Input Type

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Gate Charge

12nC

Td (on/off) @ 25°C

11ns/150ns

Test Condition

400V, 2A, 100Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

Manufacturer

IXYS

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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